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2sa19432sa1943

2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-emitter voltage VCEO -230 VEmitter-base voltage VEBO -5 VCollector current IC -15 ABase current IB -1.5 ACollector power dissipation PC 150 W(Tc = 25C) JEDEC Junction temperature Tj 150 CJEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-21F1ANote: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

 

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 2sa1943.pdf Design, MOSFET, Power

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