View 2sa1943 datasheet:
2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-emitter voltage VCEO -230 VEmitter-base voltage VEBO -5 VCollector current IC -15 ABase current IB -1.5 ACollector power dissipation PC 150 W(Tc = 25C) JEDEC Junction temperature Tj 150 CJEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-21F1ANote: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
Keywords - ALL TRANSISTORS DATASHEET
2sa1943.pdf Design, MOSFET, Power
2sa1943.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sa1943.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet