View 2sa1943t7tl datasheet:

2SA1943T7TLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -230 VCBOV Collector-Emitter Voltage -230 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -15 ACI Base Current-Continuous -1.5 ABCollector Power DissipationP 150 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg Ordering Information Product Package Packaging 2SA1943T7TL TO-3PL Tube V01 1www.sourcechips.com2SA1943T7TLELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TY

Keywords - ALL TRANSISTORS DATASHEET

 2sa1943t7tl.pdf Design, MOSFET, Power

 2sa1943t7tl.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1943t7tl.pdf Database, Innovation, IC, Electricity