View 2sa2004 datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2004DESCRIPTIONSilicon PNP epitaxial planner type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -8 ACI Base Current-Continuous -1 ABCollector Power DissipationP 20 Wc@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgisc website www.iscsemi.com isc & iscsemi is registered trademarkNCHANGE Semiconductor isc Product Specificationisc Silicon PNP Power Transistor 2SA2004ELECTRICAL CHARACTERISTICST =

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