View 2sa2004 datasheet:

Power Transistors2SA2004Silicon PNP epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV High-speed switching1.40.22.60.11.60.20.80.1 0.550.15 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit 2.540.305.080.50Collector-base voltage (Emitter open) VCBO -60 V1 2 31: BaseCollector-emitter voltage (Base open) VCEO -60 V2: Collector3: EmitterEmitter-base voltage (Collector open) VEBO -5 VTO-220D-A1 PackageCollector current IC -8 APeak collector current ICP -16 ATC = 25C PC 20 WCollector powerdissipation2.0Junction temperature Tj 150 CStorage temperature Tstg -55 to +150 C

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