View 2sa2005 datasheet:

2SA2005TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(-160V, -1.5A)2SA2005 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = -160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SC5511.1.21.30.80.752.54 2.54 2.6 (1) Base(Gate)(1) (2) (3)(2) Collector(Drain) Absolute maximum ratings (Ta = 25C)(1) (2) (3) (3) Emitter(Source)Parameter Symbol Limits UnitROHM : TO-220FNCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-base voltage VEBO -5 VCollector current IC -1.5 A2 WCollector power dissipation PC20 W (Tc = 25C)Junction temperature Tj 150 CStorage temperature Tstg -55~+150 C Packaging specifications and hFETy

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