View 2sa473 datasheet:

isc Silicon PNP Power Transistor 2SA473DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1173Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio and car stereo output stage applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -30 VCBOV Collector-Emitter Voltage -30 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -3 ACI Emitter Current-Continuous -3.0 AETotal Power DissipationP 10 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA473ELECTRICAL CHARACTERISTICS

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