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View 2sa496 datasheet:

2sa4962sa496

isc Silicon PNP Power Transistor 2SA496DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -30V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -30 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -1 ACI Emitter Current-Continuous 1 AEP Collector Power Dissipation 1 WCT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA496ELECTRICAL CHARACTERISTICST =25 unless otherwi

 

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 2sa496.pdf Design, MOSFET, Power

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