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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA562DESCRIPTIONLow Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and Amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -35 VCBOV Collector-Emitter Voltage -30 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -0.5 ACP Collector Power Dissipation @T =25 0.5 WC CT Junction Temperature 150 JStorage Temperature -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA562ELECTRICAL CHARACTERISTICST =25 unless otherwis

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