View 2sa633 datasheet:

Power Transistors www.jmnic.com2SA633 Silicon PNP Transistors B C E Features With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~+150 TO-202 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNITICBO Collector-base cut-off current VCB=30V; IE=0 100 uAIEBO Emitter-base cut-off current VEB=5.0V; IC=0 100 uAICEO Collector-emitter cut-off current VCE=30V; IB=0 0.5 mAVCBO Collector-base breakdown voltage VCEO(SUS) Collector-emitter sustaining voltage IC=20mA; IB=0 30 VVEBO Emitter-base breakdown voltage IE=1mA; Ic=0 5 VCE(sat-1) Co

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