View 2sb1186 datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOGood Linearity of hFEComplement to Type 2SD1763Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -1.5 ACI Collector Current-Peak -3 ACMCollector Power Dissipation2@ T =25aP WCCollector Power Dissipation20@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademark

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