View 2sb1612 datasheet:

Transistor2SB1612Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD24741.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.081.5 0.1Absolute Maximum Ratings (Ta=25C) 3.0 0.153 2 1Parameter Symbol Ratings UnitCollector to base voltage VCBO 10 VmarkingCollector to emitter voltage VCEO 10 VEmitter to base voltage VEBO 7 VPeak collector current ICP 2.4 A1:Base2:Collector EIAJ SC62Collector current IC 2 A3:Emitter Mini Power Type PackageCollector power dissipation PC* 1 WJunction temperature Tj 150 C Marking symbol : 2FStorage temperature Tstg 55 ~ +150

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