View 2sb772-ms datasheet:

www.msksemi.com2SB772-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Thermal Resistance, junction to Ambient RJA 250 /WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A ,IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 VEmitter-base breakdown voltage V(BR)EBO IE= -100A,IC=0 -5 VCollecto

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