View 2sc2655 datasheet:

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 5 VCollector current IC 2 ABase current IB 0.5 AJEDEC TO-92MODCollector power dissipation PC 900 mWJEITA Junction temperature Tj 150 CTOSHIBA 2-5J1AStorage temperature range Tstg -55 to 150 C Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltag

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