View 2sc2750 datasheet:

isc Silicon NPN Power Transistor 2SC2750DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Current CapabilityHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current switching industrialapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 15 ACI Collector Current-Peak 30 ACMI Base Current-Continuous 5 ABCollector Power DissipationP 100 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC2750ELEC

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