View 2sc2752 datasheet:

isc Silicon NPN Power Transistor 2SC2752DESCRIPTIONHigh breakdown voltageComplementary to 2SA1156 PNP transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2752 is suitable for low power switchingregulator, DC-DC converter and high voltageswitch.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV 500 VCER Collector-Emitter Voltage R =150BEV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 0.5 ACCollector Power DissipationP 10 WC@ Tc=25T Junction Temperature -55~150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC2752ELECTRICAL CHARACT

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