View 2sc2753 datasheet:

2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm Low noise figure, high gain NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VCollector current IC 70 mABase current IB 30 mACollector power dissipation PC 300 mWJunction temperature Tj 150 C Storage temperature range Tstg -55~125 CJEDEC TO-92JEITA SC-43TOSHIBA 2-5F1EWeight: 0.21 g (typ.) Microwave Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitTransition frequency fT VCE = 10 V, IC = 20 mA 5 GHz S21e2 (1) VCE = 10 V, IC = 20 mA, f = 500

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