View 2sc3356-r25 datasheet:

2SC3356-R25Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor 2SC3356-R25 FEATURES Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. APPLICATIONS SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. ORDERING INFORMATION Type No. Marking Package Code 2SC3356-R25 R25 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3 VCollector Current -Continuous IC 100 mACollector Dissipation PC 200 mWJunction and Storage Temperature Tj,Tstg -65 to +150 www.jsmsemi.com 1/4JSMICRO Semiconductor2SC3356-R25Silicon Epitaxial Planar TransistorELECTRICAL CHARACTERISTICS @ Ta=25

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