View 2sc3356 datasheet:

2SC3356NPN Silicon Epitaxial TransistorFeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga =11dBTyp. @VCE =10V, IC =7mA, f =1.0GHzHigh power gain.MAG = 13 dB Typ. @VCE =10V, IC =20mA, f =1.0GHzhFE ClassificationMarking R25PbRank ShFE 120 220Lead-free SOT-23 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 12 VEmitter to base voltage VEBO 3.0 VCollector current (DC) IC 100 mATotal power dissipation Ptot 200 mWJunction temperature Tj 150Storage temperature range Tstg -65 to +150Electrical Characteristics Ta = 25Parameter Symbol Testconditons Min Typ Max UnitCollector cutoff current ICBO VCB =10V, IE =0mA 1.0 AEmitter cutoff current IEBO VEB =1.0 V, IC =0mA 1.0 ADC current gain * hFE VCE =10V, IC = 20 mA 50 120 2502Insertion power gain VCE =10V, IC =2

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