View 2sc3356 datasheet:

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SC3356MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 12 VdcCollector-Base VoltageVCBO 20 VdcEmitter-Base VoltageVEBO Vdc3.0Collector Current-ContinuousIc 100 mAdc-THERMAL CHARACTERISTICS Characteristic Symbol MaxUnit PDTotal Device Dissipation 225 mWFR-5 Board(1)TA=25 251.8 mW/Derate above25 25PDTotal Device Dissipation 300 mWAlumina Substrate ,(2)TA=252.4Derate above25 25 mW/Thermal Resistance Junct

Keywords - ALL TRANSISTORS DATASHEET

 2sc3356.pdf Design, MOSFET, Power

 2sc3356.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3356.pdf Database, Innovation, IC, Electricity