All Transistors. Datasheet

 

View 2sc3356 datasheet:

2sc33562sc3356

2SC3356 TRANSISTOR (NPN) FEATURES SOT-23 / SOT-23-3L Power dissipation PCM: 0.2 W (Tamb=25) Collector current 1. BASE ICM: 0.1 A 2. EMITTER Collector-base voltage 3. COLLECTOR V(BR)CBO: 20 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 20 V(BR)CBO Ic=10A, I =0 ECollector-emitter breakdown voltage V Ic= 1mA, I =0 12 V(BR)CEO BEmitter-base breakdown voltage V(BR)EBO 3 VI = 10A, I =0 E CCollector cut-off current I V = 10 V, I =0 1CBO CB E A Emitter cut-off current I V = 1V , I =0 1EBO EB C A DC current gain hFE VCE= 10V, IC= 20mA 50 250 V =10V, I = 20mA 7 GHzGHzTransition frequency f CE CTNoise figure NF V =10V, I = 7mA, f

 

Keywords - ALL TRANSISTORS DATASHEET

 2sc3356.pdf Design, MOSFET, Power

 2sc3356.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3356.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.