View 2sc3356 datasheet:

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3356DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 11 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainMAG = 13 dB TYP.@V = 10 V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHF and CATVband.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 12 VCEOV Emitter-Base Voltage 3.0 VEBOI Collector Current-Continuous 0.1 ACCollector Power DissipationP 0.2 WC@T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN RF Transistor 2SC3356ELECTRIC

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