View 2sc3356 datasheet:

SMD Type TransistorsSMD TypeNPN Transistors2SC3356SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLow noise and high gain.NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz1 2High power gain. +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 12 VEmitter to base voltage VEBO 3.0 VCollector current (DC) IC 100 mATotal power dissipation Ptot 200 mWJunction temperature Tj 150Storage temperature range Tstg -65 to +150Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 m

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