View 2sc3356 datasheet:

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3356 is an NPN silicon epitaxial transistor designed for low(Units: mm)noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 2.80.21.50.65+0.1-0.15FEATURES Low Noise and High Gain2NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain31MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHzABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCBO 20 VMarkingCollector to Emitter Voltage VCEO 12 VEmitter to Base Voltage VEBO 3.0 VCollector Current IC 100 mATotal Power Dissipation PT 200 mWPIN CONNECTIONSJunction Temperature Tj 150 C 1. EmitterStorage Temperature Tstg 65 to +150 C 2. Base 3. C

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