View 2sc3356s-b 2sc3356s-c 2sc3356s-d datasheet:

2SC3356SNPN N RF TRAN SILICON ANSISTOR 3 U equency low sistor Ultra high fre w noise transSilicon epitax process. xial bipolar pH gain, low noHigh power g oise figure, hi c range and ideal current characterisigh dynamic n stics, 2 SOT-23 chip package, maip inly used in VHF, UHF and CATV hi cy wideband amplifier.igh frequenc d low noise a1 SOT-231Ba 2Em 3Case mitter Collector Fea ature High 1e2 Vh gain:S21 TYP. Value is 11.5dB @VCE=10VIC=20mAf=1GHz Low . Vw noise: NF TYP. Value is 1.3dB @VCE=10VIC=7mA f=1GHz fT (T TYP. Value is 7G @ VCE=10VIC=20mAf=1GHz TYP.) : P GHz VAbs ings TA=25 Unless Otherwsolute Maximum Rati wise noted PARAMETER SYMBLE MAXIM UR E MUM VALUE UNIT Coll breakdown vo VCBO 20 V lector-base b oltage Coll er breakdown VCEO 12 V lector-emitte n volt

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