View 2sc3357 datasheet:

2SC3357NPN Silicon RF TransistorFEATURESLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE CAPPLICATIONSSOT-89Designed for low noise amplifier at VHF, UHF and CATV band.MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Rating UnitCollector-base voltage V 20 VCBOCollector-emitter voltage V 12 VCEOEmitter-base voltage V 3.0 VEBOCollector current I 100 mACTotal power dissipation P * 1.2 WTJunction temperature T 150jStorage temperature T -65 to +150stgThermal Resistance R * 62.5 /Wth(j-a)* mounted on 16 cm2 X 0.7 mm(t) Ceramic Substr

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