View 2sc4226 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4226DESCRIPTIONLow Collector Curren -I = 0.1ACLow Collector PowerPc=0.1WWith SOT-323 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for broadband low noise amplifier ;wideband low noise amplifieABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 12 VCEOV Emitter-Base Voltage 3 VEBOI Collector Current-Continuous 100 mACCollector Power DissipationPc 100 mW@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65--150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC4226ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARA

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