View 2sc4226 datasheet:

SMD Type TransistorsNPN Transistors2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -65 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 12 V Emitter - base breakdown voltage VEBO IE= 100A IC= 0 3 Collector-base cut-off current ICBO VCB= 10 V , IE= 0 1uA Emitter cut-off current IEB

Keywords - ALL TRANSISTORS DATASHEET

 2sc4226.pdf Design, MOSFET, Power

 2sc4226.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4226.pdf Database, Innovation, IC, Electricity