View 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e datasheet:

2SC4226NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption ofnoise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable forhigh density surface patch installation, mainly forinstallation, mainly for the VHF, UHF low noise amplifier. SOT-3231Base 2 2Emitter 3Collector Feature High gain:S21e2 TYP. Value is 11dB @ VCE=3VIC=7mAf=1GHz dBLow noise: NF TYP. Value is 1.4 @ VCE=3VIC=7mAf=1GHz 4dB fT (TYP.) : TYP. Value is 4.5 @ VCE=3VIC=7mAf=1GHz 4.5GHz Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYMBLE MAXIMUM VALUE UNITUNIT Collector-base breakdown voltage VCBO 20 V Collector-emitter breakdown voltage VCEO 12 V Emitter-base breakd

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 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf Design, MOSFET, Power

 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf RoHS Compliant, Service, Triacs, Semiconductor

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