View 2sc6124 datasheet:

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 160 VVCEX 160 V1 : BASE Collector-emitter voltage 2 : COLLECTOR (HEAT SINK)VCEO 80 V3 : EMITTER Emitter-base voltage VEBO 7 VDC IC 2 A JEDEC Collector current Pulse ICP 4 AJEITA SC-62Base current IB 0.5 ATOSHIBA 2-5K1At = 10 s PC 2.5 Weight: 0.05 g (typ.) Collector power dissipation W (Note 1) DC 1.0 Junction temperature Tj 150 CStorage temperature range Tstg -55 to 150 C Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 m

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