View 2sc937 datasheet:

isc Silicon NPN Power Transistor 2SC937DESCRIPTIONHigh Breakdown Voltage-: V = 1200V(Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage 500 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current- Continuous 2.5 ACI Collector Current-Pulse 6 ACPCollector Power DissipationP 22 WC@ T = 25CT Junction Temperature 125 JT Storage Temperature Range -45~125 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC937ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP.

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