View 2sc945-l 2sc945-h datasheet:
2SC945NPN Transistors321.Base2.Emitter Features1 3.Collector Collector current up to 150mA Simplified outline(SOT-23) High hFE linearity Complementary to 2SA733 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current (DC) IC 150 mA Power dissipation PC 200 mWJunction temperature Tj 150Storage temperature range Tstg -55 to +150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=100 A, IE=0 60 VCollector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 VEmitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 VCollector cutoff current ICBO VCB = 60V, IE = 0 0.1 AEmitter cutoff current IEB
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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