View 2sc945 datasheet:

isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 100 mACI Base Current-Continuous 20 mABCollector Power DissipationP 250 mWC@T =25CT Junction Temperature 125 JT Storage Temperature Range -55~125 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Transistor 2SC945ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCMA UNISYMBOL PARAMETER CONDITIONS MIN TYP.X TV Collecto

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