View 2sd1309 datasheet:

isc Silicon NPN Darlington Power Transistor 2SD1309DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 3AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and low-speedswitching industrial use.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current 8 ACI Collector Current-peak 12 ACMI Base Current 0.8 ABCollector Power Dissipation40@T =25CP WCCollector Power Dissipation1.5@T =25aT Junction Temperature 150 jT Storage Temperature Range -55~150

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