View 2sd1509 datasheet:

isc Silicon NPN Darlington Power Transistor 2SD1509DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I =1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 8 VEBOI Collector Current-Continuous 2 ACI Collector Current-Peak 4 ACMI Base Current 0.5 ABCollector Power Dissipation10T =25CP WCCollector Power Dissipation1.5T =25aT Junction Temperature 150 jT Storage Temperature Range -55~150

Keywords - ALL TRANSISTORS DATASHEET

 2sd1509.pdf Design, MOSFET, Power

 2sd1509.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd1509.pdf Database, Innovation, IC, Electricity