View 2sd1658 datasheet:

2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between collector and base. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 10 V Collector-emitter voltage VCEO 60 10 V Emitter-base voltage VEBO 8 VCollector current IC 2 ABase current IB 0.5 AJEDEC Ta = 25C 1.5 Collector power PC W dissipation JEITA Tc = 25C 10 TOSHIBA 2-8H1AJunction temperature Tj 150 CStorage temperature range Tstg -55 to 150 C Weight: 0.82 g (typ.) Equivalent Circuit COLLECTOR

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