View 2sd1886c datasheet:

Ordering number : EN72012SD1886CSANYO SemiconductorsDATA SHEETwww.datasheet4u.comNPN Triple Diffused Planar Silicon Transistor2SD1886CColor TV Horizontal DeflectionOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter Voltage VCEO 700 VEmitter-to-Base Voltage VEBO 5 VCollector Current IC 8 ACollector Current (Pulse) ICP 25 A3.0 WCollector Dissipation PCTc=25C80 WJunction Temperature Tj 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxCollector Cutoff Current ICBO VCB=800V, IE=0A 10 ACo

Keywords - ALL TRANSISTORS DATASHEET

 2sd1886c.pdf Design, MOSFET, Power

 2sd1886c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd1886c.pdf Database, Innovation, IC, Electricity