View 2sd1934 e datasheet:

Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.150.45 0.1 0.45 0.1Collector to base voltage VCBO 40 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 7 V1:Emitter1 2 3Peak collector current ICP 8 A2:Collector2.54 0.153:BaseCollector current IC 5 ATO92NL PackageCollector power dissipation PC 1 WJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ m

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