View 2sd1938 datasheet:

Transistors2SD1938(F)Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mm0.40+0.100.05For muting0.16+0.100.063For DC-DC converter Features Low ON resistance Ron1 2 High forward current transfer ratio hFE(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.12.90+0.20automatic insertion through the tape packing 0.0510 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit1: Base2: EmitterCollector-base voltage (Emitter open) VCBO 50 V3: CollectorCollector-emitter voltage (Base open) VCEO 20 V EIAJ: SC-59JEDEC: SOT-346Emitter-base voltage (Collector open) VEBO 25 VMini3-G1 PackageCollector current IC 300 mAMarking symbol: 3WPeak collector current ICP 500 mACollector power dissipation PC 200 mWJunction temperature Tj 150 CStorag

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