All Transistors. Datasheet

 

View 2sd2211 datasheet:

2sd22112sd2211

SMD Type TransistorsNPN Transistors2SD2211SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5A Collector Current - Pulse ICP 30.5 Collector Power Dissipation PC W(Note.1)2 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150Note.1 :Mounted on a 4040 0.7mm ceramic substrate Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 160 Collector- emitter breakdown voltage VCEO Ic= 1 mAIB= 0 160 V

 

Keywords - ALL TRANSISTORS DATASHEET

 2sd2211.pdf Design, MOSFET, Power

 2sd2211.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd2211.pdf Database, Innovation, IC, Electricity

 

 
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