View 2sd2213 datasheet:

2SD2213Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter15 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2213Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current IC 1.5 ACollector peak current ic (peak) 3ACollector power dissipation PC 0.9 WJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 CE to C diode forward current ID 1.5 AElectrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 150 V IC = 1 mA, IE = 0voltageCollector to emitter breakdown V(BR)CEO 80 V IC = 10 mA, RBE = voltageEmitter to base breakdown V(BR)EBO 8 V

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