View 2sd2479 datasheet:

Power Transistors2SD2479Silicon NPN epitaxial planar typeUnit: mmFor low-frequency amplification7.50.2 4.50.2 Features High forward current transfer ratio hFE0.650.1 0.850.1 Allowing supply with the radial taping 0.8 C 0.8 C1.00.10.70.10.70.11.150.2 Absolute Maximum Ratings Ta = 25C1.150.2Parameter Symbol Rating Unit0.50.1 0.40.1Collector-base voltage (Emitter open) VCBO 120 VCollector-emitter voltage (Base open) VCEO 100 V0.8 C 1 2 3Emitter-base voltage (Collector open) VEBO 5 V1: Emitter2: CollectorCollector current IC 2 A2.50.2 2.50.23: BasePeak collector current ICP 3 AMT-3-A1 PackageCollector power dissipation PC 1.5 WInternal ConnectionJunction temperature Tj 150 CCStorage temperature Tstg -55 to +150 CBE 200 Electrical Characteristics Ta = 25C 3

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