View 2sd2495 datasheet:

isc Silicon NPN Darlington Power Transistor 2SD2495DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1626Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 110 VCBOV Collector-Emitter Voltage 110 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 6 ACI Base Current-Continuous 1 ABCollector Power DissipationP 30 WC@T =25CT Junction Temperature 150 JT Storage Temperature -55~150 stg1isc websitewww.i

Keywords - ALL TRANSISTORS DATASHEET

 2sd2495.pdf Design, MOSFET, Power

 2sd2495.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd2495.pdf Database, Innovation, IC, Electricity