View 2sd311 datasheet:

isc Silicon NPN Power Transistor 2SD311DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 800 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 15 ACI Base Current-Continuous 6 ABCollector Power DissipationP 150 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.0 /Wth j-cisc websitewww.iscsemi.com isc & iscsemi is registered trademark1isc Silicon NPN Po

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