View 2sd312 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD312DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 600V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 800 VCBOV Collector-Emitter Voltage 600 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 0.5 ACI Collector Current-Peak 1 ACMCollector Power DissipationP 25 WC@T =100CT Junction Temperature 150 jT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductori

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