View 2sd313 datasheet:

isc Silicon NPN Power Transistor 2SD313DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB507Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 3.0 ACI Collector Current-Peak 8.0 ACMCollector Power Dissipation1.75@ T =25aP WCCollector Power Dissipation30@ T =25CT Junction Temperature 150 JStorage Temperature Range -40~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITTher

Keywords - ALL TRANSISTORS DATASHEET

 2sd313.pdf Design, MOSFET, Power

 2sd313.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd313.pdf Database, Innovation, IC, Electricity