View 2sd315 datasheet:

isc Silicon NPN Power Transistor 2SD315DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 2.0ACE(sat) CComplement to Type 2SB509Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 4 ACI Collector Current-Peak 10 ACMCollector Power DissipationP 35 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -40~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD315ELECTRICAL CHARA

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