View 2sd316 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD316DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 5.0ACE(sat) CExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 7 ACI Collector Current-Peak 12 ACMI Base Current-Continuous 3 ABP Collector Power Dissipation @T =25 80 WC CT Junction Temperature 150 JT Storage Temperature -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered t

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