View 2sd318 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD318DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 8 VEBOI Collector Current-Continuous 3.0 ACI Collector Current-Peak 5.0 ACMCollector Power Dissipation1.5@ T =25aP WCCollector Power Dissipation25@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UN

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