View 2sd882-252 datasheet:

TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit: mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5VCollector Current to Continuous IC 3ACollector Dissipation Pc 1.25 WJunction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max UnitCollector-base breakdown voltage VCBO Ic=100uA ,IE=0 40 VCollector-emitter breakdown voltage VCEO IC= 10 mA , IB=0 30 VEmitter-base breakdown volta

Keywords - ALL TRANSISTORS DATASHEET

 2sd882-252.pdf Design, MOSFET, Power

 2sd882-252.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd882-252.pdf Database, Innovation, IC, Electricity