View 2sd882-ms datasheet:

www.msksemi.com2SD882-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 VEmitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 VCollector cut-off current ICBO VCB= 40V, IE=0 1 ACollector cut-off current

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